Sign reversal of the Hall effect in the flux flow region of
- 1. National Laboratory of Solid State Microstructures and Department of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- 2. Research Institute of Superconductor Electronics, Nanjing University, 210093 Nanjing, China
- 3. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- 4. Purple Mountain Laboratories, Nanjing 211111, China
Description
We have measured the longitudinal and transverse resistivity, and on the optimally doped single crystals with a well-shaped Hall bar structure. It is found that the Hall resistance in the flux flow region exhibits a clear sign-reversal effect. The strongest reversal Hall signal appears in the region of about the half-transition way, either on the temperature dependence of at a fixed field or the field dependence of at a fixed temperature. Detailed analysis shows that the theoretically proposed scaling law with in the small dissipation limit is not obeyed very well. The Hall resistivity is plotted in a phase diagram, and the boundary for the Hall reversal effect to occur follows the theoretical prediction of Feigel'man et al. [JETP Lett. 62, 834 (1995)], which suggests that the anomalous Hall effect may be induced by the properties of a single vortex, rather than by the collective flux motion with pinning and strong thermal fluctuations.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.174501;
- Crossref Funder ID
- 10.13039/501100001809; 10.13039/501100012166; 10.13039/501100002367;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 17
- Journal Page Range
- 6 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BISMUTH TELLURIDES; COPPER OXIDES; CUPRATES; DOPED MATERIALS; FLUCTUATIONS; HALL EFFECT; HIGH-TC SUPERCONDUCTORS; MAGNETIC FLUX; MONOCRYSTALS; PHASE DIAGRAMS; SCALING; SCALING LAWS; STRONTIUM COMPOUNDS; STRONTIUM OXIDES; TEMPERATURE DEPENDENCE; VORTICES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; BISMUTH COMPOUNDS; CHALCOGENIDES; COPPER COMPOUNDS; CRYSTALS; DIAGRAMS; INFORMATION; MATERIALS; OXIDES; OXYGEN COMPOUNDS; STRONTIUM COMPOUNDS; SUPERCONDUCTORS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TYPE-II SUPERCONDUCTORS; VARIATIONS
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- 11927809; NSFC-DFG12061131001; 62288101; 2022YFA1403200; 2023YFA1406103; 2018YFA0704201; 2021YFA0718802; XDB25000000
- Notes
- Contact Email: hhwen@nju.edu.cn; Record automatically processed
- Funding organization
- National Natural Science Foundation of China; National Key Research and Development Program of China; Chinese Academy of Sciences