Published July 1989
| Version v1
Journal article
On the determination of phosphorus depth profile in phosphorus-doped silicon
Creators
- 1. National Tsing Hua Univ., Hsinchu, TW (China). Inst. of Nuclear Science
Description
The depth profile of phosphorus concentration in phosphorus-doped silicon proved to be measureable with an accuracy of 1-3% by the use of liquid scintillation counting after neutron irradiation. The amount of Si and P was determined by neutron activation analysis, followed by liquid scintillation counting for 1-5 hours after the end of irradiation and 5-10 days after irradiation, respectively. Concentrations as low as 10 ppm and thicknesses of 20 nm can be determined. (author) 13 refs.; 1 tab
Additional details
Publishing Information
- Journal Title
- Journal of Radioanalytical and Nuclear Chemistry
- Journal Volume
- 132
- Journal Issue
- 1
- Series
- J. Radioanal. Nucl. Chem. ;Articles.
- Journal Page Range
- 99-104
- ISSN
- 0236-5731
- CODEN
- JRNCD
INIS
- Country of Publication
- Hungary
- Country of Input or Organization
- Hungary
- INIS RN
- 21030341
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ACCURACY; DEPTH; DOPED MATERIALS; IRRADIATION PROCEDURES; NEUTRON ACTIVATION ANALYSIS; PHOSPHORUS; QUANTITY RATIO; SILICON; SPATIAL DISTRIBUTION; THICKNESS
- Descriptors DEC
- ACTIVATION ANALYSIS; CHEMICAL ANALYSIS; DIMENSIONS; DISTRIBUTION; ELEMENTS; MATERIALS; NONDESTRUCTIVE ANALYSIS; NONMETALS; SEMIMETALS