Composition and structure modification of a WTi/Si system by short laser pulses

Picosecond (40 ps) pulsed Nd:YAG laser irradiation of a WTi thin film on silicon with a wavelength of 532 nm and a fluence 2.1 J/cm2 was performed in air. This led to significant changes of the chemical composition and morphology on the surface of the WTi thin film. The results show an increase in surface roughness, due to formation of conical structures, about 50 nm wide in the base, and a very thin oxide layer composed of WO3 and TiO2, with a dominant TiO2 phase at the top, within the depth of about 20 nm. The thickness of the oxide layer was dependent on the number of laser pulses. The samples were analyzed by scanning electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy. (orig.)