Published August 2008 | Version v1
Journal article Metadata-only

Bias voltage dependence of magnetic tunnel junctions comprising amorphous ferromagnetic CoFeSiB layer with double barriers

Creators

  • 1. Department of Physics, Sookmyung Women's University, Seoul (Korea, Republic of)
  • 2. Electrical Engineering Department, University of California, Los Angeles (United States)
  • 3. Department of Material Science and Engineering, Korea University, Seoul (Korea, Republic of)
  • 4. Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul (Korea, Republic of)
  • 5. Department of Oriental Biomedical Engineering, Sangji University, Wonju (Korea, Republic of)

Description

Double-barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ structures were Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free layer 10/AlOx/CoFe 7/IrMn 10/Ru 60 (in nanometers). The interlayer coupling field and the normalized TMR ratios at the applied voltages of +0.4 and -0.4 V of the amorphous CoFeSiB free-layer DMTJ offer lower and higher values than that of the polycrystalline CoFe free-layer DMTJ, respectively. An amorphous ferromagnetic CoFeSiB layer improves the interface roughness of the free layer/tunnel barrier and, as a result, the interlayer coupling field and bias voltage dependence of the TMR ratio are suppressed at a given voltage. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.200723639

Additional details

Identifiers

DOI
10.1002/pssa.200723639;

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science
Journal Volume
205
Journal Issue
8
Journal Page Range
p. 1847-1850
ISSN
1862-6300

Conference

Title
3. Seeheim conference on magnetism
Acronym
SCM 2007
Dates
26-30 Aug 2007
Place
Frankfurt am Main (Germany)

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
39106434
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM OXIDES; AMORPHOUS STATE; BINARY ALLOY SYSTEMS; BORON ALLOYS; COBALT ALLOYS; COUPLING; FERROMAGNETIC MATERIALS; INTERFACES; IRIDIUM ALLOYS; IRON ALLOYS; LAYERS; MAGNETIC FIELDS; MAGNETORESISTANCE; MANGANESE ALLOYS; QUATERNARY ALLOY SYSTEMS; ROUGHNESS; RUTHENIUM; SILICON ALLOYS; TANTALUM; THIN FILMS; TUNNEL EFFECT
Descriptors DEC
ALLOY SYSTEMS; ALLOYS; ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; FILMS; MAGNETIC MATERIALS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; PLATINUM METAL ALLOYS; PLATINUM METALS; REFRACTORY METALS; SURFACE PROPERTIES; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENTS

Optional Information

Notes
With 3 figs., 1 tab., 7 refs.. SICI: 0031-8965(200808)205:8<1847::AID-PSSA200723639>3.0.TX;2-O