Published November 2006
| Version v1
Journal article
Electron beam deflection with channeling in a silicon crystal at the REFER electron ring
Creators
- 1. Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8530 (Japan)
- 2. Venture Business Laboratory, 2-313 Kagamiyama, Higashi-Hiroshima 739-8527 (Japan)
- 3. High Energy Accelerator Research Organization KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)
Description
A new result on the deflection of 150 MeV electron beams with using the <1 0 0> axis of a silicon crystal is presented. The channeling effect of electrons passed through the crystal was clearly seen. We also studied dependence of the deflection on the beam divergence. The simulation qualitatively agreed with the experimental data
Additional details
Identifiers
- DOI
- 10.1016/j.nimb.2006.07.011;
- PII
- S0168-583X(06)00853-6;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 252
- Journal Issue
- 1
- Journal Page Range
- p. 16-19
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38040780
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHANNELING; CRYSTALS; ELECTRON BEAMS; ELECTRON RINGS; ELECTRONS; MEV RANGE 100-1000; SILICON; SIMULATION
- Descriptors DEC
- BEAMS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; LEPTON BEAMS; LEPTONS; MEV RANGE; PARTICLE BEAMS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.