Published November 7, 2005
| Version v1
Journal article
Effect of Y doping and composition-dependent elastic strain on the electrical properties of (Ba,Sr)TiO3 thin films deposited at 520 deg. C
Creators
- 1. Fujitsu Laboratories Ltd., Atsugi (Japan)
- 2. Department of Materials Science and Engineering, Stanford University, California (United States)
Description
We demonstrate that large and simultaneous improvements in permittivity, tunability, and leakage current density of (Ba,Sr)TiO3 (BST)-based thin-film capacitors can be achieved by yttrium doping. We have found that, for a low deposition temperature (520 deg. C) sputtering process, Y-doped BST capacitors exhibit tenfold lower leakage current density (<10-9 A/cm2 at 100 KV/cm) and 70% higher permittivity than nominally undoped BST-based capacitors. Furthermore, this work suggests an intriguing correlation between dopant concentration-dependent elastic strain in the films and their enhanced dielectric properties
Additional details
Identifiers
- DOI
- 10.1063/1.2125113;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 87
- Journal Issue
- 19
- Journal Page Range
- p. 192906-192906.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37021662
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- BARIUM COMPOUNDS; CAPACITANCE; CAPACITORS; CORRELATIONS; DEFORMATION; DEPOSITION; DIELECTRIC MATERIALS; DOPED MATERIALS; LEAKAGE CURRENT; PERMITTIVITY; SPUTTERING; STRONTIUM COMPOUNDS; THIN FILMS; TITANATES; YTTRIUM
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CURRENTS; DIELECTRIC PROPERTIES; ELECTRIC CURRENTS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; METALS; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2005 American Institute of Physics