Published August 18, 2014 | Version v1
Journal article

Improvement of magnetic and structural stabilities in high-quality Co2FeSi1−xAlx/Si heterointerfaces

  • 1. Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531 (Japan)
  • 2. Department of Electronics, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
  • 3. CREST, Japan Science and Technology Agency, Gobancho, Tokyo 102-0075 (Japan)

Description

We study high-quality Co2FeSi1−xAlx Heusler compound/Si (0 ≤ x ≤ 1) heterointerfaces for silicon (Si)-based spintronic applications. In thermal treatment conditions, the magnetic and structural stabilities of the Co2FeSi1−xAlx/Si heterointerfaces are improved with increasing x in Co2FeSi1−xAlx. Compared with L21-ordered Co2FeSi/Si, B2-ordered Co2FeAl/Si can suppress the diffusion of Si atoms into the Heusler-compound structure. This experimental study will provide an important knowledge for applications in Si-based spin transistors with metallic source/drain contacts.

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
7
Journal Page Range
p. 071601-071601.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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