Published November 2021 | Version v1
Journal article

Boosting photodegradation of dye solutions based on Eu3+ doping in Bismuth-layered oxyhalogenide semiconductor NaBi3O4Cl1.5Br0.5

  • 1. School of Electronic and Information Engineering, Changshu Institute of Technology, Changshu, 215500 (China)
  • 2. Department of Physics, Pukyong National University, Busan 608-737 (Korea, Republic of)

Description

Highlights: • A new 2D Bi-layered oxyhalogenide NaBi3O4Cl1.5Br0.5 was prepared via Sol-Gel method. • There is an isolated Eu-4f impurity energy level intersecting in the middle of the band gap of NaBi3O4Cl1.5Br0.5. • Eu doping makes the variation of band gap and band width become more outstanding than the other RE ions. • Optical active Eu3+ ion shows significant improvement of photodegradation of dye solutions. • Eu3+-doped NaBi3O4Cl1.5Br0.5 is not favorable for the photoluminescence application but is favorable for photocatalysis. Two-dimensional bismuth layered oxyhalogenides have excellent photoelectric applications for energy conversion and storage due to its unique crystal structures, narrow band gaps. In this work, we reported an indirect semiconductor NaBi3O4Cl1.5Br0.5 prepared via sol–gel synthesis with the subsequent solid-state reaction. This is a typical bismuth layered framework characterized by [Bi2O2]2+ slab intercalated with [Cl/Br] layers. There are distinct influences of rare ions (La3+, Gd3+, Eu3+) doping on the optical properties of NaBi3O4Cl1.5Br0.5. La3+ and Gd3+ doping slightly narrowed the band gap (several nanometers) of NaBi3O4Cl1.5Br0.5, while the band energy was greatly decreased from 2.37 eV to 2.18 eV via the Eu3+ doping in the lattice. As far as photochemical properties are concerned, La3+/Gd3+ doping didn't show an obvious contribution, while, Eu3+-doping gave an improvement to photodegradation. A comparison with DFT calculations revealed that Eu-4f could bring about the isolated energy band intersecting the forbidden band of NaBi3O4Cl1.5Br0.5, which was suggested to enhance photodegradation and delay the recombination of light-generated electrons and holes. Eu3+-doped NaBi3O4Cl1.5Br0.5 is favorable for photocatalysis, but is not favorable for photoluminescence application. This bismuth layered semiconductor can be expected to have possible applications in developing advanced energy conversion or energy storage materials such as photocatalyst, optoelectronics, and batteries.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.apsusc.2021.150814

Additional details

Identifiers

DOI
10.1016/j.apsusc.2021.150814;
PII
S016943322101878X;

Publishing Information

Journal Title
Applied Surface Science
Journal Volume
567
Journal Page Range
vp.
ISSN
0169-4332
CODEN
ASUSEE

Optional Information

Copyright
Copyright (c) 2021 Elsevier B.V. All rights reserved.