Pressure effects on the CDW transitions and magnetoresistances in NbSe3
- 1. Hokkaido Univ., Sapporo (Japan). Dept. of Applied Physics
- 2. Tokyo Univ. (Japan). Inst. for Solid State Physics (ISSP)
Description
Magnetoresistance (MR) of NbSe3 has been measured between 2 K and 150 K under high pressure including critical pressures (Pc2 and Pc1) where the lower and upper CDW phase are totally suppressed by pressure, respectively. At ambient pressure, a large MR (LMR) is observed just below Tc2, but no MR is detected above Tc2. Under high pressure, in addition to the LMR, we observe newly a MR above Tc2. Here we call it the pressure-induced MR (PIMR). The LMR always appears as long as the lower CDW phase exists, but it rapidly disappears above Pc2. Similarly, the PIMR disappears above Pc1. Furthermore, no anomalies associated with the field-induced CDW are observed within our experimental limits. From these findings, we claim that the LMR and PIMR are due to normal carriers in small pockets created by a pressure-dependent imperfect nesting of the Fermi surface in the CDW transitions. (orig.)
Additional details
Publishing Information
- Journal Title
- Journal de Physique. 4
- Journal Volume
- 9
- Journal Issue
- 10
- Journal Page Range
- p. 207-209
- ISSN
- 1155-4339
Conference
- Title
- International workshop on electronic crystals
- Acronym
- ECRYS '99
- Dates
- 31 May - 5 Jun 1999
- Place
- La Colle-sur-Loup (France)
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 31013429
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGE DENSITY; CRITICAL PRESSURE; ELECTRIC CONDUCTIVITY; FERMI LEVEL; MAGNETORESISTANCE; NIOBIUM SELENIDES; PRESSURE DEPENDENCE
- Descriptors DEC
- CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ENERGY LEVELS; NIOBIUM COMPOUNDS; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 11 refs.