Published April 1997 | Version v1
Journal article Metadata-only

Effect of laser radiation on the electronic density of states of an interface

Creators

  • 1. Institute of Inorganic Chemistry, Russian Academy of Sciences, 630090 Novosibirsk (Russian Federation)
  • 2. V.D. Kuznetsov Siberian Physicotechnical Institute at Tomsk State University, 634050 Tomsk (Russian Federation)
  • 3. Scientific-Research Institute of Semiconductor Devices, 634045 Tomsk (Russian Federation)

Description

The effect of annealing with pulsed laser radiation with wavelengths of 0.69 and 308 μm on the capacitance-voltage and conductance-voltage characteristics and the density of surface states at the insulator-(n, p)-GaAs interface as a function of the radiation energy density has been investigated

Additional details

Identifiers

DOI
10.1134/1.1187175;
PII
S1063-7826(97)02304-1;

Publishing Information

Journal Title
Semiconductors
Journal Volume
31
Journal Issue
4
Journal Page Range
p. 418-422
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35046666
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
ANNEALING; CAPACITANCE; ELECTRIC POTENTIAL; ELECTRON DENSITY; EXPERIMENTAL DATA; GALLIUM ARSENIDES; INTERFACES; LASER RADIATION; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SURFACES
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; DATA; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; GALLIUM COMPOUNDS; HEAT TREATMENTS; INFORMATION; MATERIALS; NUMERICAL DATA; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS; RADIATIONS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 31, 492-497 (April 1997); (c) 1997 American Institute of Physics.