Published December 14, 2006 | Version v1
Journal article Metadata-only

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

Creators

  • 1. Physics Department, Chung Yuan Christian University, Chung-Li, Taiwan (China)
  • 2. Electrophysics Department, National Chiao-Tung University, Hsin-Chu, Taiwan (China)
  • 3. Physics Department, National Taiwan University, Taipei, Taiwan (China)
  • 4. Department of Electrical Engineering, Yuan Ze University, Chung-Li, Taiwan (China)
  • 5. Electronic Engineering Department, Ming Chuan University, Taipei, Taiwan (China)

Description

The temperature dependence of the time-resolved photoluminescence (PL) of self-assembled InAs quantum dots (QDs) with InGaAs covering layers was investigated. The PL decay time increases with temperature from 50 to 170 K, and then decreases as the temperature increases further above 170 K. A model based on the phonon-assisted transition between the QD ground state and the continuum state is used to explain the temperature dependence of the PL decay time. This result suggests that the continuum states are important in the carrier capture in self-assembled InAs QDs

Availability note (English)

Available online at http://stacks.iop.org/0957-4484/17/5722/nano6_23_002.pdf or at the Web site for the journal Nanotechnology (Print) (ISSN 1361-6528 ) http://www.iop.org/

Additional details

Identifiers

URL
http://stacks.iop.org/0957-4484/17/5722/nano6_23_002.pdf; http://www.iop.org/;
DOI
10.1088/0957-4484/17/23/002;
PII
S0957-4484(06)31846-6;

Publishing Information

Journal Title
Nanotechnology (Print)
Journal Volume
17
Journal Issue
23
Journal Page Range
p. 5722-5725
ISSN
0957-4484

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
38010651
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
GROUND STATES; INDIUM ARSENIDES; LAYERS; PHONONS; PHOTOLUMINESCENCE; QUANTUM DOTS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0013-0065 K; TEMPERATURE RANGE 0065-0273 K; TIME RESOLUTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; ENERGY LEVELS; INDIUM COMPOUNDS; LUMINESCENCE; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; QUASI PARTICLES; RESOLUTION; TEMPERATURE RANGE; TIMING PROPERTIES