Parameters of compensating centers in n-type Si highly compensated by irradiation

Resuls of investigations into effect of γ- and neutron irradiation on defect formation in high-ohmic n-Si

using technique of capacity temperature dependence (CTD) are given. Radiation dose varied from 4.8x1017 up to 1.7x1018 cm-2. CTD technique is shown to be successfully applied to investigate into defect formation at irradiation of highly compensated silicon. Rate of admission of Ec-0.40 eV deep acceptor levels in n-Si at pulsed electron irradiation does not depend on fine impurity cocentration. Positions of energy levels of deep acceptors introduced into n-Si do not coincide and constitute, respectively, Ec-0.40 and Ec-049 eV