Published 1997 | Version v1
Miscellaneous Metadata-only

Application of MOCVD method for thin films to manufacturing semiconductor device

Creators

  • 1. Instytut Technologii Materialow Elektronicznych, Warsaw (Poland)

Description

The multilayer structures of semiconducting compounds (III-V groups) finds many applications in microelectronics due to their specific properties such as: high purity, thickness control to single monolayer, mechanical smoothness, conformity of crystal lattice parameters. Heterostructures of III-V compounds can be obtained by means of MOCVD technology. 2 figs

Part of:
Materials of 6. Scientific Conference on Electronic Technology. Vol. 1-2

Additional details

Additional titles

Original title (Polish)
Wykorzystanie technologii MOCVD struktur cienkowarstwowych do wytwarzania przyrzadow polprzewodnikowych
Augmented title (English)
InAs and InP has been studied

Publishing Information

Imprint Title
Materials of 6. Scientific Conference on Electronic Technology. Vol. 1
Imprint Pagination
[1506 p.].
Journal Page Range
p. 100-103.

Conference

Title
6. Scientific Conference on Electronic Technology.
Original Conference Title
6. Konferencja Naukowa Technologia Elektronowa
Dates
6-9 May 1997.
Place
Krynica (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
28072655
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
ALUMINIUM ARSENIDES; CHEMICAL VAPOR DEPOSITION; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MEETINGS; MICROELECTRONICS; SEMICONDUCTOR MATERIALS; THIN FILMS
Descriptors DEC
ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL COATING; DEPOSITION; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SURFACE COATING

Optional Information

Notes
Imprint:Materialy 6. Konferencji Naukowej Technologia Elektronowa. T. 1.