Radiative channel competition in silicon nanocrystallites
Creators
- 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Pr. Nauky, Kiev 03028 (Ukraine)
- 2. ESFM-National Polytechnic Institute, Material Science, Mexico D.F., 07738 (Mexico)
Description
Photoluminescence and its temperature dependence, Raman scattering and photoluminescence excitation spectra for porous silicon, as well as their transformation during keeping in ambient air, have been investigated. The competition of different radiative channels was observed. It is shown that only one of them, that causes infrared emission band and dominates in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. It is found that aging leads to an appearance of second radiative channel that causes red emission. Peculiarities of photoluminescence excitation and Raman scattering spectra, as well as of thermal quenching processes in porous silicon and the conditions for two radiative channel competitions are discussed
Additional details
Identifiers
- DOI
- 10.1016/j.jlumin.2005.02.014;
- PII
- S0022-2313(05)00069-4;
Publishing Information
- Journal Title
- Journal of Luminescence
- Journal Volume
- 115
- Journal Issue
- 3-4
- Journal Page Range
- p. 117-121
- ISSN
- 0022-2313
- CODEN
- JLUMA8
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37060098
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AGING; EXCITATION; NANOSTRUCTURES; PHOTOLUMINESCENCE; POROUS MATERIALS; QUENCHING; RAMAN EFFECT; SILICON; SPECTRA; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.