Published November 2005 | Version v1
Journal article

Radiative channel competition in silicon nanocrystallites

  • 1. V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Pr. Nauky, Kiev 03028 (Ukraine)
  • 2. ESFM-National Polytechnic Institute, Material Science, Mexico D.F., 07738 (Mexico)

Description

Photoluminescence and its temperature dependence, Raman scattering and photoluminescence excitation spectra for porous silicon, as well as their transformation during keeping in ambient air, have been investigated. The competition of different radiative channels was observed. It is shown that only one of them, that causes infrared emission band and dominates in as-prepared samples, is connected with excitonic recombination in Si nanocrystals. It is found that aging leads to an appearance of second radiative channel that causes red emission. Peculiarities of photoluminescence excitation and Raman scattering spectra, as well as of thermal quenching processes in porous silicon and the conditions for two radiative channel competitions are discussed

Additional details

Identifiers

DOI
10.1016/j.jlumin.2005.02.014;
PII
S0022-2313(05)00069-4;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
115
Journal Issue
3-4
Journal Page Range
p. 117-121
ISSN
0022-2313
CODEN
JLUMA8

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37060098
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AGING; EXCITATION; NANOSTRUCTURES; PHOTOLUMINESCENCE; POROUS MATERIALS; QUENCHING; RAMAN EFFECT; SILICON; SPECTRA; TEMPERATURE DEPENDENCE
Descriptors DEC
ELEMENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.