Analysis of sensitive parameter and damage threshold probability models for MOS devices total dose irradiation effects

The 60Co total dose experiment has been executed with 0.6μm NMOS, the cause of MOS device total dose irradiation effects is analysed. The Method to deal with the experiment data and to validated is detailed. The statistics probability model of MOS device irradiation damage threshold is established, the model parameters are estimated and validated, as a result the weibull probability distributing is better consistent with the damage threshold. The statistics probability of MOS device irradiation sensitive parameter is established, the sensitive parameter is consistent with weibull probability distributing after different total dose irradiation, and the uncertainty of the the parameter is increasing following the total dose. (authors)