Published August 1981
| Version v1
Journal article
Interpretation of the dependence of the A-center injection rate in n-type silicon on electron-irradiation intensity
Creators
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Интерпретация зависимости скорости введения А-центров в н-кремнии от интенсивности облучения электронами
Publishing Information
- Journal Title
- Fiz. Tekh. Poluprovodn.
- Journal Volume
- 15
- Journal Issue
- 8
- Series
- Fiz. Tekh. Poluprovodn.
- Journal Page Range
- 1598-1600
- ISSN
- 0015-3222
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 13660359
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CRYSTAL DEFECTS; CURRENT DENSITY; ELECTRONS; KINETIC EQUATIONS; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EQUATIONS; FERMIONS; LEPTONS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Short note; for English translation see the journal Soviet Physics - Semiconductors (USA).