NbN/AlN/NbN tunnel junctions with high current density up to 54 kA/cm2
Creators
- 1. Kansai Advanced Research Center, Communications Research Laboratory, Ministry of Posts and Telecommunications, 588-2 Iwaoka, Iwaoka-cho, Nishi-ku, Kobe 651-24 (Japan)
Description
We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for applications as submillimeter wave superconductor-insulator-superconductor mixers. A very high current density up to 54 kA/cm2, roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with about 1 nm thick AlN barriers. The magnetic field and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behavior of critical supercurrents in the high-Jc junctions. The junctions showed high-quality junction characteristics with a large gap voltage of 5 mV and sharp quasiparticle current rise (ΔVg=0.1 mV). The Rsg/RN ratio was about 5 with a Vm value of 14 mV measured at 4.2 K. copyright 1997 American Institute of Physics
Additional details
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 70
- Journal Issue
- 1
- Journal Page Range
- p. 114-116.
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 28032956
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ALUMINIUM NITRIDES; CRITICAL CURRENT; JOSEPHSON EFFECT; JOSEPHSON JUNCTIONS; MAGNETIC FIELDS; MICROWAVE RADIATION; MIXERS; NIOBIUM COMPOUNDS; NIOBIUM NITRIDES; NITROGEN COMPOUNDS; SUPERCONDUCTING DEVICES; SUPERCONDUCTING JUNCTIONS; TEMPERATURE DEPENDENCE; TUNNEL EFFECT
- Descriptors DEC
- CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; EQUIPMENT; MATERIALS HANDLING EQUIPMENT; NITRIDES; PNICTIDES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENT COMPOUNDS