Charge and interface state generation in field oxides

Radiation-induced charge and interface state generation are measured in MOS capacitors with steam oxide layers typical of standard field oxides and at low fields (<0.1 MV/cm) typical of device applications. Interface state buildup occurs primarily through a ''prompt'' process and most of the states are ''slow''. Free electron-hole pair yield at low fields is reduced from that previously measured in thinner (gate) oxides