Published 2002 | Version v1
Journal article

Eu3+- and Er3+-doped SiO2-TiO2 sol-gel films for active planar waveguides

  • 1. Institute of Materials Science, NCST of Vietnam, Hanoi (Viet Nam)
  • 2. Laboratoire d'Optique des Solides UMR 7601, Universite Pierre et Maria Curie, Paris (France)
  • 3. Institute of Low Temperature and Structure Research, Polish Academy of Sciences, Wroclaw (Poland)

Description

Sol-gel films of SiO2-TiO2-doped with Eu3+ or Er3+ ions were prepared by spin coating with a variety of molar concentration ratios of tetraetoxysilane (TEOS) and titanium isopropoxide (TPOT). The ratios of SiO2-TiO2 were 90/10, 85/15, 80/20, 75/25 and the concentrations of Eu and Er ions varied from 10-3 to 5·10-2 mol%. Silica-titania films annealed from 150 up to 900oC decreased their thickness from 300 to 150 nm and increased the refractive index from 1.49 to 1.62. The multilayer (6-8 layers) silica-titania thin films with thickness of about 1.2-1.6 μm have been developed in order to make highly doped with Eu3+ or Er3+ planar waveguides on silicon substrates. Luminescence spectra, lifetimes as well as FTIR and micro-Raman spectra have been measured. Influence of active ion concentrations and annealing temperature on the luminescence properties and the structure of thin films were investigated. (author)

Additional details

Publishing Information

Journal Title
Materials Science
Journal Volume
20
Journal Issue
2
Journal Page Range
p. 47-52
ISSN
0137-1339

Conference

Title
International Conference on Sol-Gel Materials, SGM 2001
Dates
2001
Place
Rokosowo (Poland)

Optional Information

Notes
6 refs, 3 figs, 1 tab.