Published February 15, 1991
| Version v1
Journal article
Effective collision strengths for Si II
Creators
- 1. Queen's Univ., Belfast, Northern Ireland (UK). Dept. of Pure and Applied Physics
- 2. Queen's Univ., Belfast, Northern Ireland (UK). Dept. of Applied Mathematics
Description
Collision strengths are presented for electron impact excitation among the eight lowest LS states (corresponding to 15 levels including the splitting of the doublet and quartet terms) of Si II calculated using the R-matrix method. These collision strengths are used to deduce effective collision strengths, adopting a Maxwellian electron energy distribution for electron temperatures (Te) between log Te=3.6 and 4.6. Results are presented for all transitions amongst the seven lowest levels and also for transitions from the ground state 3s23p2PJ levels to more excited states. (author)
Additional details
Publishing Information
- Journal Title
- Monthly Notices of the Royal Astronomical Society
- Journal Volume
- 248
- Journal Issue
- 4
- Series
- Mon. Not. R. Astron. Soc.
- Journal Page Range
- 827-828
- ISSN
- 0035-8711
- CODEN
- MNRAA
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 22057100
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ASTROPHYSICS; ELECTRON TEMPERATURE; ELECTRON-ION COLLISIONS; ENERGY-LEVEL TRANSITIONS; IONIZED GASES; PLASMA; R MATRIX; SILICON IONS; THEORETICAL DATA; ULTRAVIOLET SPECTRA; VISIBLE SPECTRA
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; COLLISIONS; DATA; ELECTRON COLLISIONS; FLUIDS; GASES; INFORMATION; ION COLLISIONS; IONS; MATRICES; NUMERICAL DATA; SPECTRA