Response to heavy ions and fission fragments of the monolithic silicon E-ΔE telescopes produced by the Quasi-Selective Epitaxy

The monolithic, silicon, E-ΔE telescopes with 20 and 4 μm thick ΔE detectors based on the n-p+-n and n-p-n structures, respectively, were produced using a new developed process named Quasi-Selective Epitaxy. The resistivity profiles of the n-p+-n and n-p-n structures are shown. The E-ΔE two-dimensional scatter plots obtained after irradiation of the monolithic E-ΔE telescopes by heavy ions and 252Cf by fission fragments are presented. Using the reaction 9Be(14N,X) with energy E(14N)=82.6 MeV at the laboratory angle θ=20 deg. performed at Warsaw Cyclotron the following products: He, Li, Be, B, C, N, O, F have been identified in the monolithic E-ΔE telescope with 20 μm thick ΔE detector. An energy resolution of this monolithic E-ΔE telescope measured using α-particles was about 300 keV