Published August 1988 | Version v1
Journal article Metadata-only

Silicon monocrystal exoelectron emission and its application

Creators

  • 1. Rizhskij Politekhnicheskij Inst., Riga (USSR)

Description

Detection threshold for point defects concentration-complexes and impurity, administrated by ion implantation, was estimated on the basis of silicon monocrystal photothermostimulated exoelectron emission

Additional details

Additional titles

Original title (Russian)
Экзоэлектронная эмиссия монокристаллического кремния и ее практическое применение

Publishing Information

Journal Title
Izvestiya Vysshikh Uchebnykh Zavedenij, Fizika
Journal Volume
52
Journal Issue
8
Series
Izv. Vyssh. Uchebn. Zaved., Fiz.
Journal Page Range
1611-1613
ISSN
0021-3411
CODEN
IVUFA

Conference

Title
20. All-Union conference on emission electronics.
Dates
Nov 1987.
Place
Kiev (Ukrainian SSR).

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
20053872
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
A CENTERS; ELECTRON BEAMS; HIGH TEMPERATURE; ION IMPLANTATION; MEV RANGE 01-10; MONOCRYSTALS; PHOTOELECTRIC EMISSION; RADIATION DOSES; SILICON; SURFACES; TEMPERATURE DEPENDENCE
Descriptors DEC
BEAMS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRON EMISSION; ELEMENTS; EMISSION; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; PHOTOELECTRIC EFFECT; POINT DEFECTS; SEMIMETALS; VACANCIES