Published February 1992
| Version v1
Journal article
Ion beam analysis of interface reactions
Creators
- 1. Philips Research Labs., Eindhoven (Netherlands)
- 2. Univ. of Utrecht, Dept. of Atomic and Interface Physics (Netherlands)
Description
The oxidation reaction of silicon nitride or silicon oxynitride proceeds at a solid interface. Crucial information about both the reaction mechanism and the kinetics of this process is obtained using high-energy ion beam analysis techniques. The results reviewed in this paper demonstrate that the combination of depth-resolution, sensitivity and quantitative nature of these techniques reveals details which would otherwise have remained unnoticed. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B
- Journal Volume
- 64
- Journal Issue
- 1-4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 739-743
- ISSN
- 0168-583X
- CODEN
- NIMBE
Conference
- Title
- 10. international conference on ion beam analysis (IBA-10).
- Dates
- 1-5 Jul 1991.
- Place
- Eindhoven (Netherlands).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 23052279
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- HYDROGENATION; INTERFACES; ION BEAMS; ION IMPLANTATION; ION SCATTERING ANALYSIS; NUCLEAR REACTION ANALYSIS; OXIDATION; REVIEWS; SENSITIVITY; SILICON; SILICON NITRIDES; SILICON OXIDES
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHEMICAL ANALYSIS; CHEMICAL REACTIONS; DOCUMENT TYPES; ELEMENTS; NITRIDES; NITROGEN COMPOUNDS; NONDESTRUCTIVE ANALYSIS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; SEMIMETALS; SILICON COMPOUNDS