Growth of Fluorocarbon Films by Low-Pressure Dielectric Barrier Discharge

Plasma polymerized fluorocarbon (FC) films have been deposited on silicon substrates from dielectric barrier discharge (DBD) plasma of C4F8 at room temperature under a pressure of 25∼125 Pa. The effects of the discharge pressure and frequency of power supply on the films have been systematically investigated. FC films with a less cross linked structure may be formed at a relatively high pressure. Increase in the frequency of power supply leads to a significant increase in the deposition rate. Static contact angle measurements show that deposited FC films have a stable, hydrophobic surface property. All deposited films show smooth surfaces with an atomic surface roughness. The relationship between plasma parameters and the properties of the deposited FC films are discussed.