Mo-doped BiVO4 nanotextured pillars as efficient photoanodes for solar water splitting
Creators
- 1. School of Mechanical Engineering, Korea University, Seoul, 136-713 (Korea, Republic of)
- 2. Department of Chemical & Biological Engineering, University at Buffalo, The State University of New York, Buffalo, NY, 14260-4200 (United States)
- 3. KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research (KIER), 50, UNIST-gil, Ulsan, 44919 (Korea, Republic of)
- 4. School of Energy Engineering, Kyungpook National University, Daegu, 41566 (Korea, Republic of)
Description
We present electrospray-deposited nanotextured Mo-doped BiVO4 pillars with improved photoelectrochemical water splitting performance. The three-dimensional nanotextured Mo-BiVO4 pillars exhibit large interstitial spaces, which result in a high photocurrent. The doping of Mo at the optimal concentration (0.15%) results in a two-fold increase in the photocurrent density (PCD) (1.78 mA·cm−2 at 1.2 V versus Ag/AgCl) over that of pristine BiVO4. We attribute this increase in the PCD to increases in recombination time and in donor (electron) concentration owing to the doping with hexavalent Mo, as confirmed by Bode phase and Mott-Schottky analyses, respectively. - Highlights: • Mo-doped BiVO4 films are formed by electrospray deposition. • Films consist of 3D nanotextured pillars, which help increase the photocurrent. • Optimal Mo doping results in two-fold increase in photocurrent density. • This is owing to an increase in the time constant for electron recombination. • Another factor responsible is the increase in donor (electron) concentration.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2017.07.260Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2017.07.260;
- PII
- S0925-8388(17)32637-3;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 726
- Journal Page Range
- p. 1138-1146
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49073497
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; ELECTROCHEMISTRY; PHOTOANODES; PHOTOCURRENTS; SILVER CHLORIDES; THREE-DIMENSIONAL LATTICES
- Descriptors DEC
- ANODES; CHEMISTRY; CHLORIDES; CHLORINE COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CURRENTS; ELECTRIC CURRENTS; ELECTRODES; HALIDES; HALOGEN COMPOUNDS; MATERIALS; SILVER COMPOUNDS; SILVER HALIDES; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.