Published August 1997 | Version v1
Journal article Metadata-only

Luminescence properties of InAs/GaAs quantum dots prepared by submonolayer migration-stimulated epitaxy

Creators

  • 1. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences 194021 St. Petersburg (Russian Federation)
  • 2. Institute of Analytical Instrument Building, Russian Academy of Sciences, 198103 St. Petersburg (Russian Federation)

Description

The results of an investigation of the luminescence properties of an ensemble of InAs quantum dots, obtained by submonolayer migration-stimulated epitaxy on singular and vicinal GaAs(100) surfaces, are reported. The largest width at half-height of the photoluminescence line is observed in samples with a 3 deg. disorientation, indicating that the size-variance of the quantum dots is largest in this case. Quasiequilibrium quantum dots are formed either with a long sample holding time in an arsenic flow or with a larger quantity of deposited indium

Additional details

Identifiers

DOI
10.1134/1.1187247;
PII
S1063-7826(97)00408-0;

Publishing Information

Journal Title
Semiconductors
Journal Volume
31
Journal Issue
8
Journal Page Range
p. 777-780
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35046682
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
EXPERIMENTAL DATA; GALLIUM ARSENIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; THIN FILMS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DATA; EMISSION; EPITAXY; FILMS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INFORMATION; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; NUMERICAL DATA; PHOTON EMISSION; PNICTIDES

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 31, 912-915 (August 1997); (c) 1997 American Institute of Physics.