Measurement of the differential and integral distributions of x-ray diffusion scattering from defects in thin deformed layers

Methods for two- and three crystal diffractometers were used for studying the perfection of the Ga1-xSb1-yAsyGaSb (x= 0.9; y = 0.8) epitaxial system with the film thickness 1 μm. It is shown that scattering from the samples of this system may be divided into coherent and diffusion ones. The location of the film reverse lattice and sublattice on the two-dimensional distribution of intensity for asymmetric reflections indicates absence of elastic strains relaxations. The diffusion scattering is conditioned by the Coulomb-type defects, which are in the epitaxial film. Measurement schemes for diffraction intensity integral distribution along the surface and by standards are proposed and realized