Published May 2008 | Version v1
Journal article

Decoherence suppression of excitons in semiconductor using sequential femtosecond pulses

  • 1. Department of Physics, Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8551 (Japan)
  • 2. National Institute of Information and Communications Technology, Koganei, Tokyo 184-8795 (Japan)

Description

We demonstrate the decoherence control of excitons on a layered compound semiconductor GaSe by using successive femtosecond pulses. The intermediate pulses act as π pulses, which reverse the time evolution of non-Markovian dynamics. By changing the incident timing of the π pulses, we determine the effective pulse interval condition for suppressing the decoherence of excitons by optical pulse irradiation

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jlumin.2007.11.003

Additional details

Identifiers

DOI
10.1016/j.jlumin.2007.11.003;
PII
S0022-2313(07)00341-9;

Publishing Information

Journal Title
Journal of Luminescence
Journal Volume
128
Journal Issue
5-6
Journal Page Range
p. 1075-1077
ISSN
0022-2313
CODEN
JLUMA8

Conference

Title
16. international conference on dynamical processes in excited states of solids
Dates
17-22 Jun 2007
Place
Segovia (Spain)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39076235
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
EXCITONS; GALLIUM SELENIDES; INHIBITION; MARKOV PROCESS; PHOTONS; PULSED IRRADIATION; PULSES; SEMICONDUCTOR MATERIALS
Descriptors DEC
BOSONS; CHALCOGENIDES; ELEMENTARY PARTICLES; GALLIUM COMPOUNDS; IRRADIATION; MASSLESS PARTICLES; MATERIALS; QUASI PARTICLES; SELENIDES; SELENIUM COMPOUNDS; STOCHASTIC PROCESSES

Optional Information

Copyright
Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.