On the Frequency and Voltage Dependent Interface States and Series Resistance in Au/SrTiO3/n-Si Structures

Frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the Au/SrTiO3/n-Si structures have been investigated taking into account the effect of series resistance (Rs) and interface states (Nss) in the frequency range of 5 kHz-3 MHz. The frequency and voltage dependent distribution profile of Rs and Nss were obtained by using both admittance spectroscopy and Ohm law to compare, and Hill-Coleman methods for each frequency and in the forward and reverse bias region (±7.5 V), respectively. The average value of Nss was found about 2x1012 eV-1cm-2. The C-V plots exhibit anomalous peaks due to the Nss and Rs effect. Also, the effect of Rs on C and G/are found appreciable at higher frequencies due to the C and G/ω decrease with increasing frequency. Experimental results both the magnitude of Rs and Nss are important parameters that strongly influence the electrical characteristics especially at low frequencies in Au/SrTiO3/n-Si structures