Coulomb interaction of electron gas in MQWs Si/Si1-xGex/Si
- 1. Unite de Physique des Solides, Departement de Physique, Faculte des Sciences de Monastir, Avenue de l'Environnement, 5019 Monastir (Tunisia)
- 2. Centre de Recherche en Matiere Condensee et Nanosciences, CRMC-N, UPR-CNRS 7251, Laboratory associated with the Universite de la Mediterranee and the Universite Paul Cezanne, Campus de Luminy, Case 913, 13288 Marseille cedex 9 (France)
- 3. Centre d'Electronique et de Micro-optoelectronique de Montpellier, CEM2, UMR-CNRS 5507, Universite Montpellier 2 - Sciences et Techniques du Languedoc, CC 067, Place Eugene Bataillon, 34095 Montpellier cedex 5 (France)
Description
We present a theoretical analysis of the conduction and valence-band diagrams of SiGe/Si Multiple Quantum Wells (MQWs), having a specific 'W' geometry, and designed for emission or photodetection around the 1.55 μm wavelength. Peculiar features have been extrapolated by solving self-consistent Schroedinger and Poisson equations, taking into account the electrostatic attraction induced by carrier injection. As a result, Coulomb interaction strongly modifies the band profiles and increases the electron probability density at the quantum well interfaces; the injected carrier concentration enhances electron-hole wave functions overlap and the in-plane oscillator strength. These MQWs structures, strain-compensated on relaxed Si0.75Ge0.25 pseudo-substrates, are potentially interesting for telecom applications
Availability note (English)
Available from http://dx.doi.org/10.1016/j.msec.2007.10.083Additional details
Identifiers
- DOI
- 10.1016/j.msec.2007.10.083;
- PII
- S0928-4931(07)00223-8;
Publishing Information
- Journal Title
- Materials Science and Engineering. C, Biomimetic Materials, Sensors and Systems
- Journal Volume
- 28
- Journal Issue
- 5-6
- Journal Page Range
- p. 939-942
- ISSN
- 0928-4931
Conference
- Title
- 5. Maghreb-Europe meeting on materials and their applications for devices and physical, chemical and biological sensors
- Acronym
- MADICA 2006 conference
- Dates
- 30 Oct - 1 Nov 2006
- Place
- Mahdia (Tunisia)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40028183
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COULOMB FIELD; ELECTRON DENSITY; ELECTRON GAS; ELECTRONIC STRUCTURE; ELECTRONS; EMISSION; GERMANIUM SILICIDES; HOLES; INTERACTIONS; OSCILLATOR STRENGTHS; POISSON EQUATION; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; STRAINS; TUNNEL EFFECT; WAVE FUNCTIONS
- Descriptors DEC
- DIFFERENTIAL EQUATIONS; ELECTRIC FIELDS; ELEMENTARY PARTICLES; EQUATIONS; FERMIONS; FUNCTIONS; GERMANIUM COMPOUNDS; LEPTONS; MATERIALS; NANOSTRUCTURES; PARTIAL DIFFERENTIAL EQUATIONS; SILICIDES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.