Detecting the Néel vector of altermagnets in heterostructures with a topological insulator and a crystalline valley-edge insulator
Creators
- 1. Department of Applied Physics, The University of Tokyo, 7-3-1 Hongo, Tokyo 113-8656, Japan
Description
We investigate topological phases in a bilayer system composed of an altermagnet and a two-dimensional topological insulator described by the Bernevig-Hughes-Zhang model. A topological phase transition occurs from a first-order topological insulator to a trivial insulator at a certain critical altermagnetization if the Néel vector of altermagnet is along the or axis. It is intriguing that valley-protected edge states emerge along the Néel vector in this trivial insulator, which are as stable as the topological edge states. We name it a crystalline valley-edge insulator. On the other hand, the system turns out to be a second-order topological insulator when the Néel vector is along the axis. The tunneling conductance has a strong dependence on the Néel vector. In addition, the band gap depends on the Néel vector, which is measurable by optical absorption. Hence, it is possible experimentally to detect the Néel vector by measuring tunneling conductance and optical absorption.
Additional details
Identifiers
- DOI
- 10.1103/PhysRevB.109.245306;
- arXiv
- arXiv:2403.09150;
- Crossref Funder ID
- 10.13039/100020993; 10.13039/501100002241; 10.13039/501100001700;
Publishing Information
- Journal Title
- Physical Review B
- Journal Volume
- 109
- Journal Issue
- 24
- Journal Page Range
- 6 pgs.
- ISSN
- 1550-235X
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION; BAND THEORY; COUPLINGS; ELECTRICAL INSULATORS; ENERGY GAP; HETEROJUNCTIONS; LAYERS; NEEL TEMPERATURE; PHASE TRANSFORMATIONS; SEMIMETALS; TOPOLOGY; TUNNEL EFFECT; VECTORS
- Descriptors DEC
- ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; MATHEMATICS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SORPTION; TENSORS; THERMODYNAMIC PROPERTIES; TRANSITION TEMPERATURE
Optional Information
- Copyright
- ©2024 American Physical Society
- Contract/Grant/Project number
- JPMJCR20T2; 23H00171
- Notes
- Record automatically processed
- Funding organization
- Centre de Recherche en Économie et Statistique; Japan Science and Technology Agency; Ministry of Education, Culture, Sports, Science and Technology