On the properties of Cu₂ZnSn(S,Se)₄ thin films prepared by selenization of binary precursors using rapid thermal processing

Cu₂ZnSn(S,Se)₄ thin films were grown on molybdenum coated glass substrates by selenization of stacked precursor layers of zinc, tin disulfide and copper sulfide. Selenization was performed using a rapid thermal processor at maximum temperatures in the range of 400 °C to 550 °C and at heating rates of 1 °C /s and 2 °C /s. The compositional, morphological and structural characterization of the films was carried out using energy dispersive x-ray spectroscopy, scanning electron microscopy, x-ray diffraction and Raman spectroscopy. X-ray diffraction and Raman scattering analysis suggests the formation of Cu₂ZnSn(S,Se)₄ only at lower temperatures, whereas Cu₂ZnSnSe₄ was formed at higher temperatures regardless of the heating rate used. Compositional analysis revealed that the films were Zn-poor and Sn-rich. However, the samples approach a near stoichiometric composition due to the loss of tin at a selenization temperature and heating rate of 550 °C and 2 °C /s, respectively. Large grains with an average lateral dimension of 4.5 μm were observed for films prepared at these conditions which are very desirable for an absorber for solar cells. (paper)