The investigation of influence of accelerated electrons on SiO2 used in silicon solar cells

The process of radiation defects production in enlightened SiO2 layers coated on silicon solar cells was studied. During irradiation the silicon solar cells with enlightened layers radiation defects are formed both in silicon and SiO2 thus making worse photo energetic parameters of cells. For investigation of radiation effects formed under irradiation by electrons with 5 MeV energy and cobalt-60 gamma-rays photoluminescence, absorption spectra and electron spin resonance methods were used. It is supposed that main radiation defects in silicon dioxide are E'-centers and oxygen vacancies. (A.D. Avezov). 10 refs.; 2 figs