Published June 5, 2012 | Version v1
Journal article Metadata-only

Evaluation of pelletron accelerator facility to study radiation effects on semiconductor devices

Creators

  • 1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore-570006, Karnataka (India)

Description

In this paper we present the comprehensive results on the effects of different radiation on the electrical characteristics of different semiconductor devices like Si BJT, n-channel MOSFETs, 50 GHz and 200 GHz silicon-germanium heterojunction bipolar transistor (SiGe HBTs). The total dose effects of different radiation are compared in the same total dose ranging from 100 krad to 100 Mrad. We show that the irradiation time needed to reach very high total dose can be reduced by using Pelletron accelerator facilities instead of conventional irradiation facilities.

Additional details

Identifiers

DOI
10.1063/1.4710092;

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1447
Journal Issue
1
Journal Page Range
p. 489-490
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
56. DAE solid state physics symposium 2011
Dates
19-23 Dec 2011
Place
Kattankulathur, Tamilnadu (India)

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43094205
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
GERMANIUM; GERMANIUM ALLOYS; GERMANIUM SILICIDES; HETEROJUNCTIONS; IRRADIATION; IRRADIATION PLANTS; MOSFET; PELLETRON ACCELERATORS; RADIATION DOSES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON; SILICON ALLOYS
Descriptors DEC
ACCELERATORS; ALLOYS; DOSES; ELECTROSTATIC ACCELERATORS; ELEMENTS; FIELD EFFECT TRANSISTORS; GERMANIUM COMPOUNDS; MATERIALS; METALS; MOS TRANSISTORS; NUCLEAR FACILITIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSISTORS

Optional Information

Notes
(c) 2012 American Institute of Physics