Colloid formation in copper-implanted fused silica and silicate glasses
Creators
- 1. Dipartimento di Fisica, via Marzolo 8, 35131 Padova (Italy)
- 2. Dipartimento di Ingegneria Elettrica, via Gradenigo 6, 35131 Padova (Italy)
- 3. EniChem, via Della Chimica 5, 30175 Porto Marghera (Italy)
- 4. Dipartimento di Chimica Organica, Metallorganica ed Analitica, via Loredan 4, 35131 Padova (Italy)
- 5. Dipartimento di Chimica Fisica, Calle Larga S. Marta 2137, 30123 Venezia (Italy)
- 6. Sandia National Laboratories, Department 1111, P.O. Box 5800, Albuquerque, NM 87185 (United States)
Description
Copper implantations (90 keV, 5x1016 ions/cm2) were made into fused silica, borosilicate glasses and soda-lime glass. The copper distribution has been found to vary according to glass type. The optical absorption band characteristic of the implanted metal optical properties was observed only for copper-implanted fused silica. The absorption for all the other samples was either not observable or was negligibly small, however very small metallic particles are present also in the soda-lime glass. A subsequent nitrogen implantation (100 keV, 1.5x1017 ions/cm2) completely eliminated the copper-colloid induced absorption in the copper-implanted fused silica, while it facilitated the formation of copper-colloids into the soda-lime glass. ((orig.))
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 91
- Journal Issue
- 1-4
- Journal Page Range
- p. 505-509.
- ISSN
- 0168-583X
- CODEN
- NIMBEU
Conference
- Title
- 7. international conference on radiation effects in insulators (REI-7).
- Dates
- 6-10 Sep 1993.
- Place
- Nagoya (Japan).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 26023562
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; ANNEALING; AUGER ELECTRON SPECTROSCOPY; BOROSILICATE GLASS; COLLOIDS; COPPER IONS; GLASS; ION IMPLANTATION; KEV RANGE 10-100; METALS; NITROGEN IONS; OPTICAL PROPERTIES; PARTICLES; PHOTOELECTRON SPECTROSCOPY; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; RUTHERFORD SCATTERING; SILICON OXIDES; STACKING FAULTS; TRANSMISSION ELECTRON MICROSCOPY; X RADIATION
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISPERSIONS; ELASTIC SCATTERING; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; ELEMENTS; ENERGY RANGE; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; KEV RANGE; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SCATTERING; SILICON COMPOUNDS; SPECTRA; SPECTROSCOPY