Fabrication and properties of silicon-based (Bi,Sm)4Ti3O12 thin film
Creators
- 1. School of Materials Science and Engineering, University of Jinan, Jinan 250022 (China)
- 2. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100 (China)
Description
Ferroelectric Bi3.5Sm0.5Ti3O12 (BST) thin film has been grown on n-type Si (1 0 0) substrate by chemical solution deposition and spin coating technique. X-ray diffraction and atomic force microscope analyses confirmed that the film crystallized well at 700 deg. C. Metal-ferroelectric-semiconductor (MFS) configuration has been fabricated using BST as ferroelectric layer. The electrical measurements were conducted in MFS capacitor. The current-voltage characteristic displayed good insulating properties. Apparent counterclockwise hysteresis of capacitance-voltage curve for this film as the ferroelectric hysteresis was observed. The measurements of dielectric constant and dissipation factor as a function of frequency exhibited excellent dielectric properties. The MFS structure can be valuable for ferroelectric-gate field effect transistor
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2007.12.059Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2007.12.059;
- PII
- S0925-8388(07)02287-6;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 467
- Journal Issue
- 1-2
- Journal Page Range
- p. 434-437
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40050091
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; CAPACITANCE; CAPACITORS; DISSIPATION FACTOR; ELECTRIC POTENTIAL; FABRICATION; FERROELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FREQUENCY DEPENDENCE; HYSTERESIS; LAYERS; PERMITTIVITY; SAMARIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SPIN-ON COATING; SYNTHESIS; THIN FILMS; TITANIUM OXIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIELECTRIC MATERIALS; DIELECTRIC PROPERTIES; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELEMENTS; EQUIPMENT; FILMS; MATERIALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RARE EARTH COMPOUNDS; SCATTERING; SEMICONDUCTOR DEVICES; SEMIMETALS; SURFACE COATING; TITANIUM COMPOUNDS; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.