Published May 1982 | Version v1
Journal article Metadata-only

High-resolution electron microscopy study of two-dimensional defects in GaAs

Creators

  • 1. AN SSSR, Leningrad. Fiziko-Tekhnicheskij Inst.

Description

no abstract available

Additional details

Additional titles

Original title (Russian)
Применение высокоразрешающей электронной микроскопии для исследования двумерных дефектов в арсениде галлия

Publishing Information

Journal Title
Fiz. Tverd. Tela
Journal Volume
24
Journal Issue
5
Series
Fiz. Tverd. Tela.
Journal Page Range
1519-1522
ISSN
0367-3294

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
14773510
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
CRYSTAL DEFECTS; ELECTRON MICROSCOPY; GALLIUM ARSENIDES; IMAGES; MONOCRYSTALS; TELLURIUM ADDITIONS
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; CRYSTALS; GALLIUM COMPOUNDS; MICROSCOPY

Optional Information

Notes
Short note. For English translation see the journal Soviet Physics - Solid State (USA).