Published October 1996 | Version v1
Journal article Metadata-only

Mechanism of rapid growth of direct current in semiconductor diode structures

Creators

  • 1. AN RU, Tashkent (Uzbekistan). Fiziko-Tekhnicheskij Inst.

Description

Paper deals with experimental volt-ampere characteristics obtained using amorphous selenium base diode structures, that is, Ga2S3, CdS-CdTe. Computer simulation of characteristics using a drift mechanism of ohmic relaxation of direct current passing with regard to statistics of recombination of electrons and holes through deep recombination complexes with internal complex exchange final time was carried out. 23 refs.; 3 figs

Additional details

Additional titles

Original title (Russian)
Механизм быстрого роста прямого тока в полупроводниковых диодных структурах

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
30
Journal Issue
10
Journal Page Range
p. 1729-1738.
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
28048967
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CADMIUM SULFIDES; CADMIUM TELLURIDES; COMPUTERIZED SIMULATION; DIRECT CURRENT; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS
Descriptors DEC
CADMIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; MATERIALS; PHYSICAL PROPERTIES; SIMULATION; SULFIDES; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS