Published May 5, 2014
| Version v1
Journal article
Morphology of oxygen precipitates in silicon wafers pre-treated by rapid thermal annealing
- 1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder) (Germany)
- 2. Siltronic AG, Hanns-Seidel-Platz 4, 81737 München (Germany)
Description
The morphology of oxygen precipitates in Czochralski silicon wafers pre-treated by rapid thermal annealing (RTA) and subjected to a heat treatment in the temperature range between 800 °C and 1000 °C was investigated by scanning transmission electron microscopy. The samples were pre-treated by RTA in order to establish a defined supersaturation of vacancies. It was found that in such vacancy-rich samples subjected to an annealing at 800 °C three dimensional dendrites are formed. Until now, it was known that during annealing at 800 °C plate-like oxygen precipitates are formed
Additional details
Identifiers
- DOI
- 10.1063/1.4875278;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 104
- Journal Issue
- 18
- Journal Page Range
- p. 182101-182101.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45090432
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; MORPHOLOGY; OXYGEN; SILICON; SUPERSATURATION; TEMPERATURE RANGE 1000-4000 K; TRANSMISSION ELECTRON MICROSCOPY; VACANCIES
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; HEAT TREATMENTS; MICROSCOPY; NONMETALS; POINT DEFECTS; SATURATION; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC