Published January 2023
| Version v1
Journal article
Enhanced oxygen mobility in undoped ZrO-CeO heterostructure
- 1. Institute of Chemistry, St. Petersburg State University, St. Petersburg, 199034 (Russian Federation)
- 2. Crystal Growth Technologies Laboratory, FSRC «Crystallography and Photonics» RAS, Moscow, 117333 (Russian Federation)
- 3. Department of Mathematics, Econometrics and Information Technology, MGIMO University, Moscow, 119454 (Russian Federation)
Description
The structural and ionic transport properties of the low-index undoped ZrO-CeO interfaces are simulated within the framework of density functional theory (DFT). These results show partial "melting" of the oxygen subsystem with significant disordering of the oxygen layers located between the layers of zirconium and cerium atoms. This leads to the existence of anomalously high ionic diffusion in simple undoped oxide phases with the fluorite structure. (© 2022 Wiley‐VCH GmbH)
Availability note (English)
Available from: http://dx.doi.org/10.1002/pssa.202200494Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. A, Applications and Materials Science (Online)
- Journal Volume
- 220
- Journal Issue
- 1
- Journal Page Range
- p. 1-8
- ISSN
- 1862-6319
- CODEN
- PSSABA
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 54020989
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CERIUM OXIDES; DENSITY FUNCTIONAL METHOD; DIFFUSION; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; INTERFACES; INTERSTITIALS; IONIC CONDUCTIVITY; LATTICE PARAMETERS; MOLECULAR DYNAMICS METHOD; OXYGEN IONS; ZIRCONIUM OXIDES
- Descriptors DEC
- CALCULATION METHODS; CERIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; IONS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RARE EARTH COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS; ZIRCONIUM COMPOUNDS
Optional Information
- Notes
- AID: 2200494