Published 1987
| Version v1
Book
Surface modification of aluminium thin films by oxygen ion-implantation
Description
Aluminium thin film surfaces were modified by molecular oxygen ion-implantation at 30keV to dose levels varying from 5x1016 to 5x1017 ions cm-2. Resistivity measurements indicated a gradual transformation of the implanted layer towards the stoichiometric composition of Al2O3 with increasing ion dose. J-V characteristics showed an ohmic behaviour for low fields and space charge limited conduction for high yields. Vacuum annealing reduces the defects and trap-levels present in the ion-implanted layer. (author). 9 refs
Additional details
Publishing Information
- Publisher
- Bhabha Atomic Research Centre.
- Imprint Place
- Bombay (India)
- Imprint Title
- National symposium on advances in surface treatment of metals, ASTOM-87 (held at) Bombay (during) October 14-16 1987: Technical papers
- Imprint Pagination
- 589 p.
- Journal Page Range
- p. 501-509.
Conference
- Title
- ASTOM-87.
- Acronym
- National symposium on advances in surface treatment of metals
- Dates
- 14-16 Oct 1987.
- Place
- Bombay (India).
INIS
- Country of Publication
- India
- Country of Input or Organization
- India
- INIS RN
- 19047789
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; ANNEALING; ELECTRIC CONDUCTIVITY; HIGH VACUUM; ION IMPLANTATION; MOLECULAR IONS; OXYGEN IONS; THERMAL CONDUCTION; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY TRANSFER; FILMS; HEAT TRANSFER; HEAT TREATMENTS; IONS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES