Published February 15, 1985
| Version v1
Journal article
Silicon photodiode as a detector of exposure rate
Creators
- 1. Tesla, Premysleni (Czechoslovakia). Vyzkumny Ustav Pristroju Jaderne Techniky
- 2. Ceske Vysoke Uceni Technicke, Prague (Czechoslovakia). Fakulta Jaderna a Fysikalne Inzenyrska
Description
The paper describes the utilization of a silicon photodiode as a detector of exposure dose rate. Theoretical considerations deal with the magnitude of the photocurrent as a function of minority carrier diffusion length and silicon thickness. Experimental results compare the sensitivity and radiation damage of photodiodes manufactured from various silicon materials. The photodiode energy dependence for photons in the range 7.6 keV to 1.25 MeV is also presented. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods Phys. Res., Sect. A
- Journal Volume
- 234
- Journal Issue
- 3
- Series
- CODEN: NIMRD.;Nucl. Instrum. Methods Phys. Res., Sect. A.
- Journal Page Range
- 566-572
- ISSN
- 0167-5087
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 16046626
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- CHARGE CARRIERS; DIFFUSION; DOSEMETERS; ENERGY DEPENDENCE; GAMMA DOSIMETRY; KEV RANGE 01-10; KEV RANGE 10-100; KEV RANGE 100-1000; MEV RANGE 01-10; P-N JUNCTIONS; PHOTOCONDUCTIVITY; PHOTODIODES; PHYSICAL RADIATION EFFECTS; SENSITIVITY; SILICON; SILICON DIODES; X-RAY DOSIMETRY
- Descriptors DEC
- DOSIMETRY; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; KEV RANGE; MEASURING INSTRUMENTS; MEV RANGE; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS