Published October 2001
| Version v1
Journal article
Optical properties of SiO2-films implanted with silicon and carbon ions
- 1. Yinstitut fyiziki napyivprovyidnikyiv, Kyiv (Ukraine)
Description
The results of photoluminescence (PL). Raman scattering, and electron paramagnetic resonance studies of SiO2 films was reported. The PL band at 450 nm is observed in SiO2 films implanted with Si+ and co-implanted with C+ ions. This band can be assigned to SiC nanocrystallites, formed on a long high-temperature thermal annealing
Additional details
Additional titles
- Original title (Ukrainian)
- Optichnyi vlastivostyi SiO
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kiev)
- Journal Volume
- 46
- Journal Issue
- 10
- Journal Page Range
- p. 1065-1069
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 33022284
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CARBON IONS; ELECTRON SPIN RESONANCE; EMISSION SPECTRA; FILMS; ION IMPLANTATION; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; RAMAN SPECTRA; SILICON IONS; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; EMISSION; HEAT TREATMENTS; IONS; LUMINESCENCE; MAGNETIC RESONANCE; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; RESONANCE; SILICON COMPOUNDS; SPECTRA