Study of compensation in insulating and metallic n-type CdSe using transport measurements

The resistivity and the Hall coefficient of indium-doped cadmium selenide with carrier concentrations spanning the insulator-to-metal transition have been measured as a function of temperature. We demonstrate that use of the Hall mobility deduced from these data and careful analysis and application of recent theory yield an estimate of the degree of compensation, K = N/sub A//N/sub D/, for metallic as well as insulating material. Combining these results with Hall coefficient measurements at room temperature, one can then estimate both the number of donors, N/sub D/, and acceptors, N/sub A/. .AE