Published March 2013 | Version v1
Journal article

Effect of temperature on the electrical properties of ITO in a TiO2/ITO film

  • 1. Shimane Institute for Industrial Technology, 1 Hokuryo, Matsue, Shimane 690-0816 (Japan)
  • 2. Interdisciplinary Faculty of Science and Engineering, Shimane University, 1060 Nishikawatsu, Matsue, Shimane 690-8504 (Japan)

Description

Thermal stabilities of indium tin oxide (ITO) substrates and TiO2/ITO structures were evaluated in relation to their electrical properties. The ITO substrates and TiO2/ITO structures were annealed at 350, 400, and 500 C. The ITO substrate with large grain size showed higher thermal stability than that with small grain size. The thermal stability of TiO2/ITO structure improved with increasing TiO2 thickness, and a decrease in electron concentration was observed in resistance-increased samples. These changes were attributed to variations in grain-boundary potential caused by oxygen adsorption. It may be concluded that variation of the grain-boundary potential by thermal annealing has a dominant influence on resistance. Therefore, optimization of the grain size is important to improve the thermal stability of ITO. This mechanism and procedure can be applied to improve the characteristics of other TCO materials. (Copyright copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssa.201228325

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. A, Applications and Materials Science
Journal Volume
210
Journal Issue
3
Journal Page Range
p. 589-593
ISSN
1862-6300

Optional Information

Notes
With 5 figs., 2 tabs., 13 refs.