Published July 2011
| Version v1
Journal article
A novel structure of silicon-on-insulator microring biosensor based on Young's two-slit interference and its simulation
- 1. State Key Laboratory Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Description
A novel silicon-on-insulator microring biosensor based on Young's twos lit interference has been demonstrated. The transducer signal from electric field intensity distribution on the interference screen is given by using the transfer matrix method (TMM) and two-slit interference principle. The result shows that the structure we propose is advantageous for sensing as the interference pattern is very sensitive to the ambient refractive index around the microring. A small perturbation in refractive index around the microring Δnc will result in a notable shift of destructive interference points (DIPs) on the interference screen. By detecting the shift of the DIPs, the ambient refractive index change can be obtained. (semiconductor devices)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/32/7/074010Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 32
- Journal Issue
- 7
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43015321
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRIC FIELDS; INTERFERENCE; REFRACTIVE INDEX; SEMICONDUCTOR DEVICES; SIGNALS; SILICON; SIMULATION; TRANSDUCERS; TRANSFER MATRIX METHOD
- Descriptors DEC
- CALCULATION METHODS; ELEMENTS; OPTICAL PROPERTIES; PHYSICAL PROPERTIES; SEMIMETALS