Electron spin resonance study of paramagnetic centers in neutron-irradiated heat-treated silicon
Creators
- 1. Department of Physics, University of Leuven, Celestijnenlaan 200D, 3001 Leuven (Belgium)
Description
Electron spin resonance (ESR) was used to study neutron-induced defects in silicon as functions of anneal temperature Tan. For Tan below 200 deg. C, the ESR response is dominated by the Si-P3 and Si-P6 spectra, as observed before. At Tan=200 deg. C, a low symmetry center Si-H8, only once reported before, appears. Here, a hyperfine doublet, corresponding to interaction with one 29Si nucleus, is resolved. In the range Tan≥250 deg. C, two other paramagnetic defects dominate. The first is the tetragonal center Si-B3: Mapping of the full angular dependence of known and newly resolved 29Si hyperfine structure enables conclusive identification as the tetra-interstitial (I4) in the positive charged state, based on compliance of the data with former theoretical calculations. Second, we report the observation of an unidentified trigonal center, Si-B5, exhibiting two hyperfine (hf) doublets corresponding with hf interaction with four and six equivalent Si sites. The tri-interstitial I3 is proposed as a provisional defect model. The annealing behavior and symmetry of these defects provides evidence for linking these paramagnetic B3 and B5 centers to the X and W optical centers, respectively
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter and Materials Physics
- Journal Volume
- 71
- Journal Issue
- 11
- Journal Page Range
- p. 115204-115204.8
- ISSN
- 1098-0121
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36104597
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DEFECTS; ELECTRON SPIN RESONANCE; HYPERFINE STRUCTURE; INTERACTIONS; INTERSTITIALS; IRRADIATION; NEUTRON BEAMS; PARAMAGNETISM; SEMICONDUCTOR MATERIALS; SILICON; SILICON 29; SPECTRA; SYMMETRY; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; EVEN-ODD NUCLEI; HEAT TREATMENTS; ISOTOPES; LIGHT NUCLEI; MAGNETIC RESONANCE; MAGNETISM; MATERIALS; NUCLEI; NUCLEON BEAMS; PARTICLE BEAMS; POINT DEFECTS; RESONANCE; SEMIMETALS; SILICON ISOTOPES; STABLE ISOTOPES; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2005 The American Physical Society