Published December 31, 2003
| Version v1
Journal article
Structural and vibrational properties of Cs and {Cs,H,H} complexes in Si
Creators
Description
Carbon is a common substitutional impurity in Si. It traps hydrogen, and several {C,H} and {C,H,H} complexes have been observed by electrical and optical techniques. In this paper, we report (preliminary) first-principles molecular-dynamics studies of the structures and energetics of substitutional carbon (Cs) and two {Cs,H,H} complexes. Complete vibrational spectra are obtained from linear response theory. The relative stability of the two {Cs,H,H} complexes is calculated as a function of temperature
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2003.09.159;
- PII
- S092145260300810X;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 340-342
- Journal Issue
- 3-4
- Journal Page Range
- p. 637-640
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 22. international conference on defects in semiconductors
- Dates
- 28 Jul - 1 Aug 2003
- Place
- Aarhus (Denmark)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37000640
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; CARBON; HYDROGEN; HYDROGEN COMPLEXES; IMPURITIES; MOLECULAR DYNAMICS METHOD; SILICON; STABILITY; TEMPERATURE DEPENDENCE; TRAPS; VIBRATIONAL STATES
- Descriptors DEC
- CALCULATION METHODS; COMPLEXES; ELEMENTS; ENERGY LEVELS; EXCITED STATES; NONMETALS; SEMIMETALS; SPECTRA
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.