Published December 31, 2003 | Version v1
Journal article

Structural and vibrational properties of Cs and {Cs,H,H} complexes in Si

Description

Carbon is a common substitutional impurity in Si. It traps hydrogen, and several {C,H} and {C,H,H} complexes have been observed by electrical and optical techniques. In this paper, we report (preliminary) first-principles molecular-dynamics studies of the structures and energetics of substitutional carbon (Cs) and two {Cs,H,H} complexes. Complete vibrational spectra are obtained from linear response theory. The relative stability of the two {Cs,H,H} complexes is calculated as a function of temperature

Additional details

Identifiers

DOI
10.1016/j.physb.2003.09.159;
PII
S092145260300810X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
340-342
Journal Issue
3-4
Journal Page Range
p. 637-640
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
22. international conference on defects in semiconductors
Dates
28 Jul - 1 Aug 2003
Place
Aarhus (Denmark)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37000640
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ABSORPTION SPECTRA; CARBON; HYDROGEN; HYDROGEN COMPLEXES; IMPURITIES; MOLECULAR DYNAMICS METHOD; SILICON; STABILITY; TEMPERATURE DEPENDENCE; TRAPS; VIBRATIONAL STATES
Descriptors DEC
CALCULATION METHODS; COMPLEXES; ELEMENTS; ENERGY LEVELS; EXCITED STATES; NONMETALS; SEMIMETALS; SPECTRA

Optional Information

Copyright
Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.