Published October 2018 | Version v1
Journal article

Magnetization, the susceptibilities and the hysteresis loops of a borophene structure

  • 1. School of Science, Shenyang University of Technology, Shenyang, 110870 (China)

Description

Highlights: • A borophene structure with a perfect hexagonal vacancy is proposed. • Magnetization, susceptibility, blocking temperature of the system have been studied by effective-field theory. • Multiple hysteresis loops are found for the certain values of the parameters. The magnetic properties of borophene structure are studied for the first time by the effective-field theory with correlations. This method has been successfully used in analyzing the magnetic mechanism of graphene. The borophene consisting of 36 boron atoms with a central hexagonal vacancy can be described by Ising model. The general formula of the magnetization for the borophene is given. Possible physical mechanism of the emergence magnetic properties is demonstrated. The effects of the exchange coupling and the anisotropy of the magnetization, the susceptibility the blocking temperature and hysteresis loops of borophene are discussed. We also illustrate the possibility to test the predicted magnetism in an experiment, such as the maximum on the magnetization curve. Our study may provide an opportunity for the design of a new type of memory-switching or sensors by using earth-rich nonmagnetic boron materials.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physe.2018.07.028

Additional details

Identifiers

DOI
10.1016/j.physe.2018.07.028;
PII
S1386947718305575;

Publishing Information

Journal Title
Physica E. Low-Dimensional Systems and Nanostructures (Print)
Journal Volume
104
Journal Page Range
p. 138-145
ISSN
1386-9477

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53036925
Subject category
S77: NANOSCIENCE AND NANOTECHNOLOGY;
Descriptors DEI
BORON; GRAPHENE; HYSTERESIS; ISING MODEL; MAGNETIC PROPERTIES; MAGNETISM; MATERIALS; SENSORS; VACANCIES
Descriptors DEC
CARBON; CRYSTAL DEFECTS; CRYSTAL MODELS; CRYSTAL STRUCTURE; ELEMENTS; MATHEMATICAL MODELS; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2018 Elsevier B.V. All rights reserved.