Magnetization, the susceptibilities and the hysteresis loops of a borophene structure
- 1. School of Science, Shenyang University of Technology, Shenyang, 110870 (China)
Description
Highlights: • A borophene structure with a perfect hexagonal vacancy is proposed. • Magnetization, susceptibility, blocking temperature of the system have been studied by effective-field theory. • Multiple hysteresis loops are found for the certain values of the parameters. The magnetic properties of borophene structure are studied for the first time by the effective-field theory with correlations. This method has been successfully used in analyzing the magnetic mechanism of graphene. The borophene consisting of 36 boron atoms with a central hexagonal vacancy can be described by Ising model. The general formula of the magnetization for the borophene is given. Possible physical mechanism of the emergence magnetic properties is demonstrated. The effects of the exchange coupling and the anisotropy of the magnetization, the susceptibility the blocking temperature and hysteresis loops of borophene are discussed. We also illustrate the possibility to test the predicted magnetism in an experiment, such as the maximum on the magnetization curve. Our study may provide an opportunity for the design of a new type of memory-switching or sensors by using earth-rich nonmagnetic boron materials.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physe.2018.07.028Additional details
Identifiers
- DOI
- 10.1016/j.physe.2018.07.028;
- PII
- S1386947718305575;
Publishing Information
- Journal Title
- Physica E. Low-Dimensional Systems and Nanostructures (Print)
- Journal Volume
- 104
- Journal Page Range
- p. 138-145
- ISSN
- 1386-9477
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53036925
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- BORON; GRAPHENE; HYSTERESIS; ISING MODEL; MAGNETIC PROPERTIES; MAGNETISM; MATERIALS; SENSORS; VACANCIES
- Descriptors DEC
- CARBON; CRYSTAL DEFECTS; CRYSTAL MODELS; CRYSTAL STRUCTURE; ELEMENTS; MATHEMATICAL MODELS; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.