Published September 1, 2012
| Version v1
Journal article
Influence of series resistance and cooling conditions on I–V characteristics of SiC merged PiN Schottky diodes
- 1. Department of Electronics and Computer Science, Koszalin University of Technology, J. J. Śniadeckich 2, Koszalin, Postal Code: 75-453 (Poland)
Description
The paper presents the exemplary electro-thermal models of merged PiN Schottky diode – a diode with the parallel PiN junction, protecting the device against the uncontrolled voltage rise, causing so-called thermal runaway. In the presented models, the conductivity modulation effect in the PiN junction is taken into account. The influence of the PiN junction on the non-isothermal I–V characteristics of MPS diodes, for various cooling conditions, is discussed. It is shown, that the thermal runaway is possible, in spite of presence of protecting PiN junction.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.mseb.2012.02.019Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2012.02.019;
- PII
- S0921-5107(12)00101-8;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 177
- Journal Issue
- 15
- Journal Page Range
- p. 1310-1313
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44110035
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- COOLING; MODULATION; PHOTODIODES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDES; SIMULATION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SILICON COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.